Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Abstract: SRAM-based Compute-In-Memory (CIM) circuits have demonstrated significant performance and energy efficiency advantages. Although numerous frameworks or tools have emerged for simulating ...
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